A Novel Ga 2 O 3 Superjunction LDMOS Using P-Type Diamond with Improved Performance
Source abstract
Abstract
Gallium oxide (Ga 2 O 3 ) has drawn remarkable attention for next generation power electronics applications. However, the development of Ga 2 O 3 power devices is seriously restricted due to its inefficient p-type dopants and low thermal conductivity. In this article, a novel Ga 2 O 3 superjunction (SJ) LDMOS (laterally-diffused metal-oxide semiconductor) device with introduction of a p-type diamond layer in the drift region is proposed and numerical investigated. The drift region of the proposed Ga 2 O 3 device consists of n-type Ga 2 O 3 , Al 2 O 3 and p-type diamond, which is not only increases the breakdown voltage (BV) and reduces the specific on-resistance ( R on,sp ), but also improves thermal performance of the device. The simulation results show that the BV and R on,sp of the proposed device are 23.22 mΩ·cm 2 and 7000 V, which are improved by more than 82.3% and 133% compared with those the conventional gate-connected filed-plate Ga 2 O 3 lDMOS with a R on,sp of 131.43 mΩ·cm 2 and a BV of 3000 V, respectively. Moreover, the thermal performance of the proposed Ga 2 O 3 SJ LDMOS is also improved dramatically, although the power density of the proposed device is about 5.7 times higher than that of the conventional device.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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