journal article·2022-11Open access

Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells

Jizheng Wang

EcoMat· Volume 4· Issue 6

Abstract

Abstract Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency. Despite the critical advances in the field, there are confusions in understanding such diode based solar cells, especially on open‐circuit voltage and fill factor. This review intends to provide a succinct summary and interpretation for the core elements that are related to a solar cell device. First, the fundamental concepts of PN junction and diode solar cell are introduced. Second, Fermi and quasi‐Fermi levels are described, followed by understanding open‐circuit voltage and fill factor. Thirdly, the effects of heterojunction band offset are discussed. In the end, a brief conclusion is presented. image
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids Institute of Chemistry, Chinese Academy of Sciences Beijing People's Republic of China

School of Chemical Sciences University of Chinese Academy of Sciences Beijing People's Republic of China

Funding

Chinese Academy of Sciences · Ministry of Science and Technology of the People's Republic of China

References (20)

Show source-provided references
1. 10.1016/j.jechem.2020.03.01910.1016/j.jechem.2020.03.019 ↗
2. 10.1007/s40820-021-00672-w10.1007/s40820-021-00672-w ↗
3. 10.1039/D0TA11336K10.1039/D0TA11336K ↗
4. 10.1039/D0TA10594E10.1039/D0TA10594E ↗
5. 10.1038/nphoton.2014.13410.1038/nphoton.2014.134 ↗
6. 10.1038/nenergy.2016.1610.1038/nenergy.2016.16 ↗
7. 10.1007/s40820-020-00517-y10.1007/s40820-020-00517-y ↗
8. 10.1039/c3cp51383a10.1039/c3cp51383a ↗
9. 10.1039/c2jm33719c10.1039/c2jm33719c ↗
10. 10.1016/j.nanoen.2017.10.02710.1016/j.nanoen.2017.10.027 ↗
11. 10.1002/047006832910.1002/0470068329 ↗
12. 10.1002/aenm.20110033410.1002/aenm.201100334 ↗
13. 10.1039/c2ee03178g10.1039/c2ee03178g ↗
14. 10.1117/3.44602810.1117/3.446028 ↗
15. 10.1063/1.173603410.1063/1.1736034 ↗
16. 10.1016/j.solmat.2010.07.00610.1016/j.solmat.2010.07.006 ↗
17. 10.1016/j.solmat.2014.10.03610.1016/j.solmat.2014.10.036 ↗
18. 10.1007/s11664-017-5850-910.1007/s11664-017-5850-9 ↗
19. 10.1063/1.514476710.1063/1.5144767 ↗
20. 10.1016/j.cap.2020.06.00510.1016/j.cap.2020.06.005 ↗