journal article·2025-04-04Open access

Optimization of dispersion angle in resonant cavity micro-light-emitting diode using multilayer DBR and microlens structures

Tzu-Yi Lee, Chien-Chi Huang, Fu-He Hsiao, Chin-Wei Sher, Gong-Ru Lin, Li-Yin Chen, Fang-Chung Chen, Chia-Feng Lin, Jr-Hau He, Kuo-Bin Hong, Yu-Heng Hong, Hao-Chung Kuo

Discover Nano· Volume 20· Issue 1

Abstract

In this paper, the fabrication and the corresponding performance characteristics of resonant cavity micro-light-emitting diodes (RC-μ-LEDs) are examined, with particular emphasis placed on reducing the light emission angle to enhance their application efficiency. A stepped quantum well structure and a multilayer aperture distributed Bragg reflector (DBR) are used to reduce the light emission angle, and two different approaches are investigated: one is by adding a multilayer DBR structure, and the other is by incorporating a microlens (ML) structure. The experimental results show that both adjusting the DBR cycles and adding microlenses can effectively reduce the dispersion angle of light emission, and thus improving the directionality of light, wavelength stability, and the overall device performance. Such highly directional light sources offer great solutions for optical communications, micro-LEDs, and augmented reality (AR) applications.
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Research context

OpenAlex topics: Semiconductor Lasers and Optical Devices · Photonic and Optical Devices · GaN-based semiconductor devices and materials

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References (28)

Show source-provided references
1. Huang W-T, Lee T-Y, Bai Y-H, Wang H-C, Hung Y-Y, Hong K-B, Chen F-C, Lin C-F, Chang S-W, Han J. InGaN-based blue resonant cavity micro-LEDs with staggered multiple quantum wells enabling full-color and low-crosstalk micro-LED displays. Next Nanotechnol. 2024;5:100048.10.1016/j.nxnano.2024.100048 ↗
2. Wang C-J, Ke Y, Shiu G-Y, Chen Y-Y, Lin Y-S, Chen H, Lin C-F. InGaN resonant-cavity light-emitting diodes with porous and dielectric reflectors. Appl Sci. 2020;11:8.10.3390/app11010008 ↗
3. 王元诚; 李建军; 王海阔; 袁泽旭; 王梦欢; 邹德恕; 韩军; 邓军. 氮化镓基谐振腔发光二极管发展近况. Optoelectronics. 2017;7:127.10.12677/OE.2017.74018 ↗
4. Li C, Feng M, Liu J, Liu W, Sun X, Liu J, Sun Z, Zhu G, Zhang S, Sun Q. GaN-based resonant-cavity light-emitting diode towards a vertical-cavity surface-emitting laser. IEEE J Selected Topics Quantum Electron. 2024.10.1109/JSTQE.2024.3469978 ↗
5. Lee T-Y, Huang C-C, Hung Y-Y, Chen F-C, Hong Y-H, Kuo H-C. InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays. Discover Nano. 2024;19:1–9.10.1186/s11671-024-04018-4 ↗
6. Hsieh T-H, Huang W-T, Hong K-B, Lee T-Y, Bai Y-H, Pai Y-H, Tu C-C, Huang C-H, Li Y, Kuo H-C. Optoelectronic simulations of InGaN-based green micro-resonant cavity light-emitting diodes with staggered multiple quantum wells. Crystals. 2023;13:572.10.3390/cryst13040572 ↗
7. Hunt N, Schubert E. High efficiency resonant cavity LEDs. In: Microcavities and photonic bandgaps: physics and applications. Berlin: Springer; 1996. p. 343–52.
8. Liu Z, Ren K, Dai G, Zhang J. A review on micro-LED display integrating metasurface structures. Micromachines. 2023;14:1354.10.3390/mi14071354 ↗
9. Zhou S, Liu X, Yan H, Chen Z, Liu Y, Liu S. Highly efficient GaN-based high-power flip-chip light-emitting diodes. Opt Express. 2019;27:A669–92.10.1364/OE.27.00A669 ↗
10. Zhao X, Tang B, Gong L, Bai J, Ping J, Zhou S. Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes. Appl Phys Lett. 2021;118:182102.10.1063/5.0043240 ↗
11. Zhao S, Xu B, Zhao Z, Gu D, Zhang Y, Lv W, Lv X. Gallium nitride-based resonant cavity light-emitting diode with single-longitudinal-mode emission. Opt Lett. 2022;47:4616–9.10.1364/OL.469233 ↗
12. Lee T-Y, Miao W-C, Hung Y-Y, Bai Y-H, Chen P-T, Huang W-T, Chen K-A, Lin C-C, Chen F-C, Hong Y-H. Ameliorating uniformity and color conversion efficiency in quantum dot-based micro-LED displays through Blue–UV hybrid structures. Nanomaterials. 2023;13:2099.10.3390/nano13142099 ↗
13. Voelkel R, Nussbaum P, Roulet J-C, Blattner P, Weible KJ, Herzig HP. Design, fabrication, and testing of micro-optical components for sensors and microsystems. In: Proceedings of micro-optical technologies for measurement, sensors, and microsystems II and optical fiber sensor technologies and applications, pp. 196–211.10.1117/12.281227 ↗
14. Yuan W, Li L-H, Lee W-B, Chan C-Y. Fabrication of microlens array and its application: a review. Chin J Mech Eng. 2018;31:1–9.10.1186/s10033-018-0204-y ↗
15. Song J, Choi J, Zhang C, Deng Z, Xie Y, Han J. Elimination of stacking faults in semipolar GaN and light-emitting diodes grown on sapphire. ACS Appl Mater Interfaces. 2019;11:33140–6.10.1021/acsami.9b11316 ↗
16. Lee KJ, Oh S, Kim S-J, Yim S-Y, Myoung N, Lee K, Kim JS, Jung SH, Chung T-H, Park S-J. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN. Nanotechnology. 2019;30:415301.10.1088/1361-6528/ab31d0 ↗
17. Yoldas BE, Partlow DP. Formation of broad band antireflective coatings on fused silica for high power laser applications. Thin Solid Films. 1985;129:1–14.10.1016/0040-6090(85)90089-6 ↗
18. Mao P, Sun F, Yao H, Chen J, Zhao B, Xie B, Han M, Wang G. Extraction of light trapped due to total internal reflection using porous high refractive index nanoparticle films. Nanoscale. 2014;6:8177–84.10.1039/C4NR01065E ↗
19. Chen S-WH, Huang Y-M, Singh KJ, Hsu Y-C, Liou F-J, Song J, Choi J, Lee P-T, Lin C-C, Chen Z. Full-color micro-LED display with high color stability using semipolar (20–21) InGaN LEDs and quantum-dot photoresist. Photonics Res. 2020;8:630–6.10.1364/PRJ.388958 ↗
20. Singh K, Huang W, Hsiao F, Miao W, Lee T, Pai Y, Kuo H. Recent advances in micro-LEDs having yellow-green to red emission wavelengths for visible light communications. Micromachines. 2023;14(2):478.10.3390/mi14020478 ↗
21. Piprek J. Efficiency droop in nitride-based light-emitting diodes. Phys Status Solidi A. 2010;207:2217–25.10.1002/pssa.201026149 ↗
22. Stavrinou P, Whitehead M, Parry G, Button C. Angular spectrum of visible resonant cavity light-emitting diodes. J Appl Phys. 1999;86:3475–7.10.1063/1.371233 ↗
23. Lee T-Y, Huang Y-M, Chiang H, Chao C-L, Hung C-Y, Kuo W-H, Fang Y-H, Chu M-T, Wu C-I, Lin C-C. Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition. Opt Express. 2022;30:18552–61.10.1364/OE.455726 ↗
24. Chen S-WH, Huang Y-M, Chang Y-H, Lin Y, Liou F-J, Hsu Y-C, Song J, Choi J, Chow C-W, Lin C-C. High-bandwidth green semipolar (20–21) InGaN/GaN micro light-emitting diodes for visible light communication. ACS Photonics. 2020;7:2228–35.10.1021/acsphotonics.0c00764 ↗
25. James Singh K, Huang W-T, Hsiao F-H, Miao W-C, Lee T-Y, Pai Y-H, Kuo H-C. Recent advances in micro-LEDs having yellow-green to red emission wavelengths for visible light communications. Micromachines. 2023;14:478.10.3390/mi14020478 ↗
26. Haemmer M, Roycroft B, Akhter M, Dinh DV, Quan Z, Zhao J, Parbrook PJ, Corbett B. Size-dependent bandwidth of semipolar ($11\overline 2 2$) light-emitting-diodes. IEEE Photonics Technol Lett. 2018;30:439–42.10.1109/LPT.2018.2794444 ↗
27. Hsiao F-H, Miao W-C, Lee T-Y, Pai Y-H, Hung Y-Y, Iida D, Lin C-L, Chow C-W, Lin G-R, Ohkawa K. Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs. Sci Rep. 2024;14:7018.10.1038/s41598-024-57132-9 ↗
28. Chang Y-H, Huang Y-M, Liou F-J, Chow C-W, Liu Y, Kuo H-C, Yeh C-H, Gunawan WH, Hung T-Y, Jian Y-H. 2.805 Gbit/s high-bandwidth phosphor white light visible light communication utilizing an InGaN/GaN semipolar blue micro-LED. Opt Express. 2022;30:16938–46.10.1364/OE.455312 ↗