Large‐Area Self‐Assembled Graphene Source Electrodes for High‐Performance Vertical Organic Field‐Effect Transistors and their Arrays

ABSTRACT Vertical organic field‐effect transistors (VOFETs) have garnered significant attention due to their inherently short‐channel design, which facilitates high‐frequency operation, low power consumption, and the capability to drive high current densities. However, the incompatibility between traditional source electrodes and solution‐processed organic semiconductors severely limits large‐scale integration and performance enhancement of VOFETs. In this study, we report a controllable solvent interface self‐assembly strategy for fabricating ultra‐thin, low‐roughness graphene source electrodes. Based on the source electrodes and precise control of the molecular packing of the polymer semiconductor (PffBT4T‐2OD), the resulting polymer‐based VOFETs demonstrate competitive performance metrics, including a high on/off ratio of 3.4 × 10 ⁶ and a current density of 63.2 mA cm ⁻² , along with exceptional operational stability. Furthermore, devices with operating voltages as low as −1.5 V and channel lengths down‐scaled to 37 nm have been realized. Importantly, large‐area VOFET arrays with a device density of 3906 devices per cm ² have been successfully fabricated, laying the groundwork for high‐density, low‐power organic integrated circuits. This advancement provides a scalable manufacturing solution for flexible electronics and organic electronic system‐on‐chip applications.