Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)
Source abstract
Abstract
Semiconductor Quantum Dots In article number 2419940, Fabio Bersano, Adrian M. Ionescu, and co-workers achieve electrostatic and magnetic control in a silicon-on-insulator nanowire through ferromagnetic gates magnetized along the direction of carrier flow. The magnetic gate stack, alternating with a standard metallic one, is integrated into a front-end-of-line–compatible process.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Surface Roughness and Optical Measurements
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Affiliations
Nanoelectronic Devices Laboratory (Nanolab) IEM EPFL Lausanne 1015 Switzerland
IBM Research‐Zurich Rüschlikon 8803 Switzerland
Interdisciplinary Center for Electron Microscopy EPFL Lausanne 1015 Switzerland
Hybrid Quantum Circuits Laboratory (HQC Lab) IPHYS EPFL Lausanne 1015 Switzerland
References
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