DataVXAdvanced Functional MaterialsPaper
journal article·2025-02Open access

Tailoring the Tunneling‐Effect‐Boosted Interfacial Charge Trapping via Effective Conjugation Length (Adv. Funct. Mater. 7/2025)

Suhendro Purbo Prakoso, Hsun‐Xien Peng, Mei‐Nung Chen, Qi‐An Hong, Rosari Saleh, Yu‐Cheng Chiu

Advanced Functional Materials· Volume 35· Issue 7
Publisher pageOpen full text
Source abstract

Abstract

Interfacial Charge Trapping The novel perception of a memory transistor based on tunneling-effect-boosted interfacial charge trapping is introduced by Yu-Cheng Chiu and co-workers in article number 2415415. The organic thin film transistor can behave like a memory device under photo-assisted programming/erasing operations, leading to the multimodal functionality of this device for in-memory computing, in-sensor computing, potentially supporting neuromorphic computing, machine learning, and AI development.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Semiconductor materials and devices · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical Engineering National Taiwan University of Science and Technology No. 43, Sec. 4, Keelung Rd., Da'an Dist. Taipei City 10607 Taiwan

Advanced Institute for Materials Research (WPI‐AIMR) Tohoku University 2‐1‐1 Katahira, Aoba‐ku Sendai Miyagi 980‐8577 Japan

Departemen Fisika Fakultas MIPA – Universitas Indonesia Depok 16424 Indonesia

Advanced Research Center for Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan

References

Reference metadata was not supplied for this record.