DataVXAdvanced Functional MaterialsPaper
journal article·2020-05

Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020)

Xu Jing, Yury Illarionov, Eilam Yalon, Peng Zhou, Tibor Grasser, Yuanyuan Shi, Mario Lanza

Advanced Functional Materials· Volume 30· Issue 18
Publisher page
Source abstract

Abstract

In article number 1901971, Mario Lanza and co-workers review the main challenges and potential solutions towards the fabrication of field effect transistors with 2D semiconducting channels. The scalability and compatibility of these materials with the requirements imposed by the semiconductor industry are discussed, and some recommendations are proposed.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications · Advanced Semiconductor Detectors and Materials

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Affiliations

Institute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China

Institute for Microelectronics (TU Wien) Gusshausstrasse 27‐29 Vienna 1040 Austria

Ioffe Physical‐Technical Institute Polytechnicheskaya 26 St. Petersburg 194021 Russia

Andrew and Erna Viterbi Faculty of Electrical Engineering Technion–Israel Institute of Technology Haifa 32000 Israel

State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Materials Science and Engineering Department Guangdong Technion–Israel Institute of Technology 241 Daxue Road Shantou 515063 China

References

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