Lasers: Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods (Adv. Funct. Mater. 37/2017)
Source abstract
Abstract
A sub-wavelength plasmonic nanolaser with hybrid metal-oxide-semiconductor (MOS) structures can realize single-mode and multi-mode lasing by manipulating size and shape of the III-nitride semiconductor nanorods, as demonstrated by Bin Liu, R. Zhang and co-workers in article number 1703198. This finding provides innovative insight towards next-generation optoelectronic and information devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Thermal Radiation and Cooling Technologies
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Affiliations
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing National Laboratory of Microstructures Nanjing University Nanjing 210093 P. R. China
School of Electronic Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 P. R. China
References
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