journal article·2016-09

Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang, Li Zeng, Xinge Yu, Peijun Guo, Binghao Wang, Qing Ma, Robert P. H. Chang, Junsheng Yu, Michael J. Bedzyk, Tobin J. Marks, Antonio Facchetti

Advanced Functional Materials· Volume 26· Issue 34
Publisher page

Abstract

Enhanced metal oxide (In2O3, IZO, IGZO) transistor performance via polyethylenimine (PEI) doping is demonstrated by J. Yu, M. J. Bedzyk, T. J. Marks, A. Fachetti, and co-workers on page 6179. PEI electron donating capacity combined with charge trapping and variation in the matrix film microstructure contribute, for proper PEI doping levels, to high electron mobility, optimal TFT off-currents, and optimal threshold voltages. This concept is promising for opto-electronic devices based on metal oxide films.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Thin-Film Transistor Technologies

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Affiliations

Department of Chemistry and the Materials Research Center Northwestern University 2145, Sheridan Road Evanston IL 60208 USA

State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China (UESTC) Chengdu 610054 China

Applied Physics Program and the Materials Research Center Northwestern University 2220 Campus Drive Evanston IL 60208 USA

Department of Materials Science and the Materials Research Center Northwestern University 2220 Campus Drive Evanston IL 60208 USA

DND‐CAT Synchrotron Research Center APS/ANL Building 432A, 9700 S. Cass Ave. Argonne IL 60439 USA

Polyera Corporation 8045 Lamon Avenue Skokie IL 60077 USA

References

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