Organic Field‐Effect Transistors: Direct UV Patterning of Electronically Active Fullerene Films (Adv. Funct. Mater. 19/2011)

UV light is utilized for the attainment of high-resolution and electronically active patterns in [6,6]-phenyl C61-butyric acid methyl ester (PCBM) films with a novel, photoresist-free method. On page 3723, Ludvig Edman and co-workers present the fabrication of patterns by directly exposing selected parts of a solution-cast PCBM film to UV light. Complex, large-area PCBM structures with features of 1 μm are obtained, and the patterned material exhibits a high average electron mobility in transistor experiments.