Field Effect Transistors: Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors (Adv. Funct. Mater. 3/2019)
Source abstract
Abstract
In article number 1804378, Francesco Rossella and co-workers describe a single n-type InAs nanowire, electrically contacted, which is surrounded by an ionic liquid – a neutral ensemble of positive and negative ions, liquid at room temperature. A large metallic electrode forces the positive ions to wrap the nanowire. The resulting electric field induces electron accumulation in the nanowire. The ionic liquid gating outstandingly drives the nanowire based field effect transistor.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Analytical Chemistry and Sensors · Advanced Sensor and Energy Harvesting Materials
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Affiliations
Univ. Grenoble Alpes CNRS Grenoble INP Institut Néel 38000 Grenoble France
NEST Scuola Normale Superiore and Istituto Nanoscienze‐CNR Piazza S. Silvestro 12 I‐56127 Pisa Italy
Central Research Institute of Electric Power Industry Yokosuka Kanagawa 240‐0196 Japan
References
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