Transistors: Large‐Area Schottky Barrier Transistors Based on Vertically Stacked Graphene–Metal Oxide Heterostructures (Adv. Funct. Mater. 30/2017)
Source abstract
Abstract
In article number 1700651, Jeong Ho Cho and co-workers demonstrate the fabrication of all-transparent flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene–metal-oxide–metal heterostructures and ion gel gate dielectrics. The resulting vertical devices show a high current density of 19 A cm−2 and an on–off current ratio over 104 at low voltages.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 440‐746 South Korea
Department of Chemical Engineering Soongsil University Seoul 156‐743 South Korea
School of Chemical Engineering Sungkyunkwan University Suwon 440‐746 South Korea
References
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