MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts (Adv. Funct. Mater. 43/2022)
Source abstract
Abstract
Immunostimulant In Situ Hydrogels In article number 2204288, Ye Zhou and co-workers propose a time-saving ultraviolet ozone technique to tune the work function of MXene electrodes. Van der Waals contact between MXene and MoS2 can alleviate the Fermi level pinning effectively, and the pinning factor can be greatly optimized to 0.87. This study provides a new strategy to eliminate the negative effects of Fermi level pinning.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: MXene and MAX Phase Materials · Advanced Sensor and Energy Harvesting Materials · Graphene and Nanomaterials Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. China
Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China
Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra, Australian Capital Territory 2601 Australia
References
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