Electronic Devices on Various Substrates: Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates (Adv. Funct. Mater. 16/2011)

High-quality, fully formed silicon electronic devices that can be fabricated onto nearly any surface are presented by John A. Rogers and co-workers on page 3029. The cover shows a false-colored scanning electron microscopy image of an array of metal oxide semiconductor field-effect transistors that are fully formed on a silicon wafer. Potential applications range from large-area backplanes for display systems to stretchable components for advanced surgical devices. (Cover design: J. Sinn-Hanlon, University of Illinois)