High‐Leakage‐Resistance and Low‐Turn‐On‐Voltage Upconversion Devices Based on Perovskite Quantum Dots (Adv. Funct. Mater. 1/2024)
Source abstract
Abstract
Solution-Processed Upconversion Devices In article number 2309589, Zong-Liang Tseng, Shun-Wei Liu, and co-workers demonstrate an effective strategy for improving the leakage resistance and turn-on voltage of solution-processed upconversion devices. Emissive perovskite quantum dots and a synergistic hole-transporting layer ensure the quality of quantum-dot films and provide a new way for designing high-performance solutionprocessed upconversion devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Luminescence Properties of Advanced Materials
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Affiliations
Department of Electro‐Optical Engineering National Taipei University of Technology Taipei 106344 Taiwan
Organic Electronics Research Center Ming Chi University of Technology New Taipei City 24301 Taiwan
Department of Electronic Engineering Ming Chi University of Technology New Taipei City 24301 Taiwan
References
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