DataVXAdvanced Functional MaterialsPaper
journal article·2016-05Open access

Amorphous Semiconductors: Ionic Liquid Activation of Amorphous Metal‐Oxide Semiconductors for Flexible Transparent Electronic Devices (Adv. Funct. Mater. 17/2016)

Pushpa Raj Pudasaini, Joo Hyon Noh, Anthony T. Wong, Olga S. Ovchinnikova, Amanda V. Haglund, Sheng Dai, Thomas Zac Ward, David Mandrus, Philip D. Rack

Advanced Functional Materials· Volume 26· Issue 17
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Source abstract

Abstract

Athermal field induced activation of amorphous indium gallium zinc oxide is demonstrated for flexible transparent thin film transistor applications, by P. D. Rack and co-workers on page 2820. The activation process is controlled by field-induced oxygen migration across the ionic liquid–semiconductor interface, which shows potential as a promising alternative to traditional post-deposition thermal annealing and opens the door to wide-scale implementation into flexible electronic applications.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materialsMaterials processing

OpenAlex topics: ZnO doping and properties · Electronic and Structural Properties of Oxides · Catalytic Processes in Materials Science

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Affiliations

Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA

Center for Nanophase Materials Sciences and the Institute for Functional Imaging of Materials Oak Ridge National Laboratory Oak Ridge TN 37931 USA

Chemical Sciences Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA

Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA

Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

References

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