High‐Performance Dopamine Sensors Based on Whole‐Graphene Solution‐Gated Transistors

The correct Figure 4 is shown here: Figure 4. a) Transfer characteristics ( V DS = 0.05 V) of a SGGT with Pt gate electrode measured in PBS solution before and after the addition of dopamine with the concentration of 1 M. b) Channel current response of the SGGT to additions of dopamine with different concentrations.V DS = 0.05 V, V G = 0.7 V. Inset: the change of effective gate voltage ( V G eff ) for different dopamine concentrations.