Multifunctional Nanocrystalline Thin Films of Er₂O₃: Interplay between Nucleation Kinetics and Film Characteristics

Abstract In this study, thin films of Er₂O₃ are deposited by low‐pressure metal–organic chemical vapor deposition (MOCVD) using a tris(isopropylcyclopentadienyl)erbium precursor and O₂ on various substrates, including p‐type Si(100), Si(111), Corning glass, and c‐axis‐oriented α‐Al₂O₃(0001). The resulting films are extensively characterized in order to demonstrate their applicability as antireflective and protective coatings and as high‐k gate dielectrics. The interplay existing among the substrate, the nucleation kinetics, and the resulting structural, morphological, optical, and electrical properties of Er₂O₃ thin films is explored. Fast nucleation governed by surface energy minimization characterizes the growth of (111)‐oriented Er₂O₃ on Si(100), glass, and α‐Al₂O_3. Conversely, nonhomogeneous nucleation leads to polycrystalline Er₂O₃ on Si(111) substrates. Er₂O₃ films grown on Si(100) possess superior characteristics. A high refractive index of 2.1 at 589.3 nm, comparable to the value for bulk single crystalline Er₂O₃, a high transparency in the near UV‐vis range, and an optical bandgap of 6.5 eV make Er₂O₃ interesting as an antireflective and protective coating. A static dielectric constant of 12–13 and a density of interface traps as low as 4.2 × 10¹⁰ cm² eV^–1 for 5–10 nm thick Er₂O₃ layers grown on Si(100) render the present Er₂O₃ films interesting also as high‐k dielectrics in complementary metal oxide semiconductor (CMOS) devices.