Ferroelectric films and devices
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
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References (43)
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1. Integration of high permittivity ferroelectric materials with silicon
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3. Electrode materials for ferroelectric thin film capacitors and their effect on the electrical properties
4. Electrical properties of ferroelectric thin-film capacitors with hybrid (Pt, RuO2) electrodes for nonvolatile memory applications10.1063/1.359572 ↗
5. High temperature barrier electrode technology for high density ferroelectric memories with stacked capacitor structure10.1149/1.1838680 ↗
6. Phase evolution and annealing effects on the electrical properties of Pb(Zr0.53Ti0.47)O3 thin films with RuO2 electrodes10.1016/0040-6090(94)06318-4 ↗
7. The effect of Ru02/Pt hybrid bottom electrode structure on the leakage and fatigue properties of chemical solution derived Pb(ZrxTi1−x)O3 thin films10.1557/JMR.1999.0135 ↗
8. Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FERAM application10.1080/10584589808202077 ↗
9. Relationships among ferroelectric fatigue, electronic charge trapping, defect-dipoles, and oxygen vacancies in perovskite oxides10.1080/10584589708013031 ↗
10. A model for optical and electrical polarization fatigue in SrBi2Ta2O9 and Pb(Zr, Ti)O310.1080/10584589708015696 ↗
11. Fatigued state of the Pt-PZT-Pt system10.1080/10584589708221682 ↗
12. Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr, Ti)O3 thin films capacitors with Pt electrodes10.1063/1.121386 ↗
13. Scaling possibility of PZT capacitors for high density and low voltage NVFRAM application10.1080/10584589708012983 ↗
14. Investigation of hydrogen induced changes in SrBi2Ta2O9 ferroelectric films10.1063/1.366179 ↗
15. Characteristics of PZT thin films as ultra-high density recording media10.1080/10584589708013006 ↗
16. Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52TI0.48)O3/SrRuO3 heterostructures10.1126/science.276.5315.1100 ↗
17. Application of high-permittivity perovskite thin films to dynamic random access memories10.1557/S0883769400035910 ↗
18. (Ba, Sr)TiO3 thin films for DRAMs
19. The dielectric response of fiber-textured (Ba, Sr)TiO3 thin films grown by chemical vapor deposition10.1063/1.366062 ↗
20. Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors10.1063/1.366147 ↗
21. Electrical properties of all-perovskite oxide (SrRuO3/BaxSr1−xTiO3/SrRuO3) capacitors10.1143/JJAP.36.5866 ↗
22. Electrical properties and microstructures of Pt/Ba0.5Sr0.5TiO3/SrRuO3 capacitors10.1063/1.118590 ↗
23. Ferroelectricity of heteroepitaxial Ba0.6Sr0.4TiO3 ultrathin films10.1080/10584589708012984 ↗
24. Novel ferroelectric epitaxial (Ba, Sr)TiO3 capacitor for deep submicron memory applications10.1109/55.641435 ↗
25. Asymmetric ferroelectricity and anomalous current conduction in heteroepitaxial BaTiO3 thin films10.1143/JJAP.36.5846 ↗
26. Ferroelectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films on SrRuO3/SrTiO3 substrates10.1143/JJAP.36.5575 ↗
27. The influence of strain on the dielectric behavior of (Ba, Sr)TiO3 thin films grown by LS-MOCVD on Pt/SiO2/Si
28. Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films10.1103/PhysRevLett.80.1988 ↗
29. Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz10.1063/1.120796 ↗
30. Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh density dynamic random access memories10.1063/1.366045 ↗
31. Charge injection into SrTIO3 thin films10.1016/S0040-6090(96)09073-6 ↗
32. Richardson—Schottky effect in solids10.1103/PhysRevLett.15.967 ↗
33. Analysis of resistance degradation of SrTiO3 and BaxSr1−xTiO3 thin films10.1143/JJAP.34.5245 ↗
34. An important failure mechanism in MOCVD (Ba, Sr)TiO3 thin films: resistance degradation
35. Common and unique aspects of perovskite thin film CVD processes10.1080/10584589808202070 ↗
36. MOCVD of (Ba, Sr)TiO3 for 1-Gbit DRAMs
37. Barrier properties for oxygen diffusion in a TaSiN layer10.1143/JJAP.36.L893 ↗
38. Analysis of a fence-free platinum etch process10.1080/10584589708013015 ↗
39. Phase development and electrical property analysis of pulsed laser deposited Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) epitaxial thin films10.1063/1.368809 ↗
40. Crystalline oxides on silicon: the first five monolayers10.1103/PhysRevLett.81.3014 ↗
41. Thermodynamic stability of binary oxides in contact with silicon10.1557/JMR.1996.0350 ↗
42. Thermodynamics of epitaxial ferroelectric films
43. Summerfelt · 1996