Anisotropy in the wet-etching of semiconductors
Source abstract
Abstract
The surface chemistry and electrochemistry of the anisotropic etching of semiconductors are reviewed. Recent insights into the anisotropic chemical etching of silicon in alkaline solution and of electrochemical etching of anisotropic pores in n-type semiconductors are described. The possible role of galvanic effects in open-circuit etching is emphasized.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
Show source-provided references
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