journal article·2019-05

Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors

Ko‐Chun Lee, Shih‐Hsien Yang, Yung‐Shang Sung, Yuan‐Ming Chang, Che‐Yi Lin, Feng‐Shou Yang, Mengjiao Li, Kenji Watanabe, Takashi Taniguchi, Ching‐Hwa Ho, Chen‐Hsin Lien, Yen‐Fu Lin

Advanced Functional Materials· Volume 29· Issue 22
Publisher page

Abstract

Abstract Complementary circuits based on 2D materials show great promise for next‐generation electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence and noise measurements. Ambipolar transfer characteristics are achieved owing to the tunable Fermi level of the graphene contact and negligible and 30 meV Schottky barrier heights for the n‐ and p‐channel regimes, respectively. An inverter is also fabricated to demonstrate ambipolar ReSe2 FET operation in a logic circuit. Furthermore, a p/n switchable unipolar FET is designed and shows potential for building complimentary circuits from a signal device. This work demonstrates the potential of all‐2D ReSe2 FETs and makes available new approaches for designing next‐generation devices.
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Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan

Department of Physics National Chung Hsing University Taichung 40227 Taiwan

Department of Electrophysics National Chiao Tung University Hsinchu 300 Taiwan

Key Laboratory of Polar Materials and Devices Ministry of Education Department of Electronic Engineering East China Normal University Shanghai 200241 China

National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 Japan

Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei 106 Taiwan

Institute of Nanoscience National Chung Hsing University Taichung 40227 Taiwan

Funding

Ministry of Science and Technology, Taiwan · Ministry of Education, Culture, Sports, Science and Technology · Core Research for Evolutional Science and Technology · Japan Science and Technology Agency

References (63)

Show source-provided references
1. 10.1126/science.110289610.1126/science.1102896 ↗
2. 10.1109/JPROC.2013.225763310.1109/JPROC.2013.2257633 ↗
3. 10.1038/nnano.2008.26810.1038/nnano.2008.268 ↗
4. 10.1126/science.112592510.1126/science.1125925 ↗
5. 10.1039/c4nr01741b10.1039/c4nr01741b ↗
6. 10.1007/s12274-017-1477-710.1007/s12274-017-1477-7 ↗
7. 10.1021/acs.chemmater.6b0036410.1021/acs.chemmater.6b00364 ↗
8. 10.1021/ja402858310.1021/ja4028583 ↗
9. 10.1002/adma.20160197710.1002/adma.201601977 ↗
10. 10.1021/nn505392610.1021/nn5053926 ↗
11. 10.1021/acsnano.6b0416510.1021/acsnano.6b04165 ↗
12. 10.1038/s41598-018-30969-710.1038/s41598-018-30969-7 ↗
13. 10.1002/aelm.20160029810.1002/aelm.201600298 ↗
14. 10.1038/nnano.2017.23010.1038/nnano.2017.230 ↗
15. 10.1038/s41928-018-0086-010.1038/s41928-018-0086-0 ↗
16. 10.1126/science.aac943910.1126/science.aac9439 ↗
17. 10.1016/j.mattod.2015.11.00310.1016/j.mattod.2015.11.003 ↗
18. 10.1038/nmat412710.1038/nmat4127 ↗
19. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
20. 10.1103/PhysRevB.96.01410110.1103/PhysRevB.96.014101 ↗
21. 10.1038/srep0595110.1038/srep05951 ↗
22. 10.1021/acsnano.7b0775510.1021/acsnano.7b07755 ↗
23. 10.1021/acsnano.6b0287910.1021/acsnano.6b02879 ↗
24. 10.1002/adma.20150507010.1002/adma.201505070 ↗
25. 10.1063/1.494746810.1063/1.4947468 ↗
26. 10.1038/nnano.2016.11510.1038/nnano.2016.115 ↗
27. 10.1038/nature0423310.1038/nature04233 ↗
28. 10.1021/acsnano.6b0715910.1021/acsnano.6b07159 ↗
29. 10.1021/nl403465v10.1021/nl403465v ↗
30. 10.1021/acs.nanolett.5b0506610.1021/acs.nanolett.5b05066 ↗
31. 10.1021/nl500999r10.1021/nl500999r ↗
32. 10.1021/nn501723y10.1021/nn501723y ↗
33. 10.1021/acsnano.5b0423310.1021/acsnano.5b04233 ↗
34. 10.1002/adfm.20150534610.1002/adfm.201505346 ↗
35. 10.1021/nl502603d10.1021/nl502603d ↗
36. 10.1021/nl400044m10.1021/nl400044m ↗
37. 10.1021/nl403036h10.1021/nl403036h ↗
38. 10.1002/cnma.20150010210.1002/cnma.201500102 ↗
39. 10.1039/C6NH00192K10.1039/C6NH00192K ↗
40. 10.1088/2053-1583/aa591f10.1088/2053-1583/aa591f ↗
41. 10.1002/adma.20130584510.1002/adma.201305845 ↗
42. 10.1021/acsnano.5b0073610.1021/acsnano.5b00736 ↗
43. 10.1021/nn505868h10.1021/nn505868h ↗
44. 10.1016/S0022-3697(99)00201-210.1016/S0022-3697(99)00201-2 ↗
45. 10.1088/1361-6528/aa6f5110.1088/1361-6528/aa6f51 ↗
46. 10.1002/smll.20160378810.1002/smll.201603788 ↗
47. 10.1103/PhysRevB.92.05411010.1103/PhysRevB.92.054110 ↗
48. 10.1016/j.nanoen.2018.12.01410.1016/j.nanoen.2018.12.014 ↗
49. 10.1016/j.jallcom.2004.04.01110.1016/j.jallcom.2004.04.011 ↗
50. 10.1063/1.352835410.1063/1.3528354 ↗
51. 10.1063/1.367627710.1063/1.3676277 ↗
52. 10.1021/nn100393710.1021/nn1003937 ↗
53. 10.1016/j.nantod.2010.12.00110.1016/j.nantod.2010.12.001 ↗
54. 10.1109/TED.2016.260613910.1109/TED.2016.2606139 ↗
55. 10.1103/PhysRevLett.99.24680310.1103/PhysRevLett.99.246803 ↗
56. 10.1049/el:1988036910.1049/el:19880369 ↗
57. 10.1021/nl401078310.1021/nl4010783 ↗
58. 10.1021/acsnano.7b0410010.1021/acsnano.7b04100 ↗
59. 10.1021/acsnano.7b0775510.1021/acsnano.7b07755 ↗
60. 10.1038/srep0692810.1038/srep06928 ↗
61. 10.1002/advs.20170042310.1002/advs.201700423 ↗
62. 10.1002/adma.20150267710.1002/adma.201502677 ↗
63. 10.1088/2053-1583/1/1/01100210.1088/2053-1583/1/1/011002 ↗