DataVXAdvanced Functional MaterialsPaper
journal article·2017-04

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Xinke Liu, Jing Wu, Wenjie Yu, Le Chen, Zhonghui Huang, He Jiang, Jiazhu He, Qiang Liu, Youming Lu, Deliang Zhu, Wenjun Liu, Peijiang Cao, Shun Han, Xinbo Xiong, Wangying Xu, Jin‐Ping Ao, Kah‐Wee Ang, Zhubing He

Advanced Functional Materials· Volume 27· Issue 13
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Source abstract

Abstract

Monolayer WxMo1−xS2‐based field effect transistors are demonstrated for the first time on the monolayer WxMo1−xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as‐grown monolayer WxMo1−xS2. Electronic band structure of monolayer WxMo1−xS2 has been calculated using first‐principle theory. The thermal stability of monolayer WxMo1−xS2 has been evaluated using Raman‐temperature measurement. Carrier transport study on the fabricated WxMo1−xS2 FETs has been analyzed using temperature‐dependent current measurement, and a field effect mobility of ≈30 cm2 V−1 s−1 at 300 K is obtained.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Materials Science and Engineering Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University 3688 Nanhai Avenue Shenzhen 518060 P. R. China

Institute of Materials Research and Engineering (IMRE) 2 Fusionopolis Way, Innovis #08‐03 Singapore 138634 Singapore

State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology CAS 865 Chang Ning Road Shanghai 200050 P. R. China

Department of Materials Science and Engineering Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG) Southern University of Science and Technology 1088 Xueyuan Road Shenzhen 518055 P. R. China

Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 117583 Singapore Singapore

Funding

National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Natural Science Foundation of Huizhou University · Science and Technology Commission of Shanghai Municipality · Science and Engineering Research Council · Agency for Science, Technology and Research

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