DataVXAdvanced Functional MaterialsPaper
journal article·2020-05

Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries

Hyun Ho Choi, Alexandra F. Paterson, Michael A. Fusella, Julianna Panidi, Olga Solomeshch, Nir Tessler, Martin Heeney, Kilwon Cho, Thomas D. Anthopoulos, Barry P. Rand, Vitaly Podzorov

Advanced Functional Materials· Volume 30· Issue 20
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Source abstract

Abstract

Abstract Highly crystalline thin films in organic semiconductors are important for applications in high‐performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect and charge transport properties of organic transistors based on two exemplary benchmark systems is elucidated: (1) solution‐processed blends of 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) small molecule and indacenodithiophene‐benzothiadiazole (C16IDT‐BT) conjugated polymer, and (2) large‐area vacuum evaporated polycrystalline thin films of rubrene (C42H28). It is discovered that, despite the high field‐effect mobilities of up to 6 cm2 V−1 s−1 and the evidence of a delocalized band‐like charge transport, the Hall effect in polycrystalline organic transistors is systematically and significantly underdeveloped, with the carrier coherence factor α < 1 (i.e., yields an underestimated Hall mobility and an overestimated carrier density). A model based on capacitively charged grain boundaries explaining this unusual behavior is described. This work significantly advances the understanding of magneto‐transport properties of organic semiconductor thin films.
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Research context

PolymersElectronic materials

OpenAlex topics: Organic Electronics and Photovoltaics · Organic Light-Emitting Diodes Research · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and Astronomy Rutgers University Piscataway NJ 08854 USA

School of Materials Science and Engineering & Engineering Research Institute Gyeongsang National University Jinju 52828 Korea

Division of Physical Sciences and Engineering and KAUST Solar Centre King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

Department of Electrical Engineering Princeton University Princeton NJ 08544 USA

Department of Physics and Centre for Plastic Electronics Imperial College London South Kensington London SW7 2AZ UK

Sara and Moshe Zisapel Nano‐Electronic Center Department of Electrical Engineering Technion Israel Institute of Technology Haifa 3200 Israel

Department of Chemistry and Centre for Plastic Electronics Imperial College London South Kensington London SW7 2AZ UK

Center for Advanced Soft Electronics & Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Korea

Andlinger Center for Energy and the Environment Princeton University Princeton NJ 08544 USA

Funding

National Science Foundation · Pohang University of Science and Technology · Ministry of Science, ICT and Future Planning · Engineering and Physical Sciences Research Council · European Research Council · King Abdullah University of Science and Technology · Ministry of Aliyah and Immigrant Absorption

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