journal article·2012-01-11

Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

An Quan Jiang, Hyun Ju Lee, Cheol Seong Hwang, James F. Scott

Advanced Functional Materials· Volume 22· Issue 1
Publisher page

Abstract

Abstract After calculations of various domain‐switching current transients under the pulse from electrical circuit parameters, the field dependence of domain‐switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4–280 K from the height of domain‐switching current in Pb(Zr0.4Ti0.6)O3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954, 95, 690] and an ultimate domain‐switching current density of 1.4 × 108 A cm−1 is extracted at the highest field of 0.20 MV cm−1. From classical domain‐nucleation models with thermal fluctuations, an ultimate (asymptotic high‐field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink‐nucleation‐rate limited.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Photorefractive and Nonlinear Optics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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