Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing
Source abstract
Abstract
Abstract Memristive devices based on mixed ionic–electronic resistive switches have an enormous potential to replace today's transistor‐based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains unclear however how ionic carriers are propagated in amorphous oxide films at high local electric fields. By using memristive model devices based on LaFeO3 with either amorphous or epitaxial nanostructures, we engineer the structural local bonding units and increase the oxygen‐ionic diffusion coefficient by one order of magnitude for the amorphous oxide, affecting the resistive switching operation. We show that only devices based on amorphous LaFeO3 films reveal memristive behavior due to their increased oxygen vacancy concentration. We achieved stable resistive switching with switching times down to microseconds and confirm that it is predominantly the oxygen‐ionic diffusion character and not electronic defect state changes that modulate the resistive switching device response. Ultimately, these results show that the local arrangement of structural bonding units in amorphous perovskite films at room temperature can be used to largely tune the oxygen vacancy (defect) kinetics for resistive switches (memristors) that are both theoretically challenging to predict and promising for future memory and neuromorphic computing applications.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electrochemical Materials Department of Materials ETH Zürich Hönggerbergring 64 8093 Zürich Switzerland
Institute of Chemical Technologies and Analytics Technische Universität Wien Getreidemarkt 9/164EC 1060 Vienna Austria
Electrochemical Materials Department of Materials Science and Engineering Massachusetts Institute of Technology 77 Massachusetts Ave., 8‐242 Cambridge MA 02139 USA
Multifunctional Ferroic Materials Department of Materials ETH Zurich Vladimir‐Prelog‐Weg 1‐5/10 8093 Zürich Switzerland
Materials Research and Technology Department Luxembourg Institute of Science and Technology 5 Avenue des Hauts‐Fourneaux 4362 Esch‐sur‐Alzette Luxembourg
Physics and Materials Science Research Unit University of Luxembourg 41 Rue du Brill 4422 Belvaux Luxembourg
Dipartimento di Scienze Chimiche e Geologiche Università di Cagliari Via Università 40 9124 Cagliari Italy
Laboratory for Surface Science and Technology Department of Materials ETH Zurich Vladimir‐Prelog‐Weg 5 8093 Zurich Switzerland
Electrochemical Materials Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Ave., 8‐242 Cambridge MA 02139 USA
Funding
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung · Fonds National de la Recherche Luxembourg
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