High‐Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis
Source abstract
Abstract
Abstract High‐performance organic transistor memory elements with donor‐polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 × 104, and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Organic Electronics and Photovoltaics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. 10.1002/adma.20050056110.1002/adma.200500561 ↗
2. 10.1021/ja035143a10.1021/ja035143a ↗
3. 10.1002/adma.20060143410.1002/adma.200601434 ↗
4. 10.1002/adma.20060256410.1002/adma.200602564 ↗
5. 10.1063/1.142713610.1063/1.1427136 ↗
6. 10.1063/1.189546610.1063/1.1895466 ↗
7. 10.1016/S0379-6779(02)01193-110.1016/S0379-6779(02)01193-1 ↗
8. 10.1063/1.137905910.1063/1.1379059 ↗
9. 10.1038/nmat132910.1038/nmat1329 ↗
10. 10.1016/j.msec.2005.09.05710.1016/j.msec.2005.09.057 ↗
11. 10.1002/adma.20030618710.1002/adma.200306187 ↗
12. 10.1063/1.213206210.1063/1.2132062 ↗
13. 10.1063/1.271385610.1063/1.2713856 ↗
14. 10.1016/j.orgel.2007.05.00310.1016/j.orgel.2007.05.003 ↗
15. 10.1109/LED.2004.84118610.1109/LED.2004.841186 ↗
16. 10.1016/j.synthmet.2005.07.31710.1016/j.synthmet.2005.07.317 ↗
17. 10.1002/adma.20040080910.1002/adma.200400809 ↗
18. 10.1126/science.283.5403.82210.1126/science.283.5403.822 ↗
19. 10.1002/(SICI)1521-4095(199901)11:1<11::AID-ADMA11>3.0.CO;2-310.1002/(SICI)1521-4095(199901)11:1<11::AID-ADMA11>3.0.CO;2-3 ↗
20. 10.1021/ja03776410.1021/ja037764 ↗
21. 10.1002/adma.20050022510.1002/adma.200500225 ↗
22. 10.1016/j.orgel.2005.11.00710.1016/j.orgel.2005.11.007 ↗
23. 10.1016/j.tsf.2006.05.04010.1016/j.tsf.2006.05.040 ↗
24. 10.1021/ja052488f10.1021/ja052488f ↗
25. 10.1038/nnano.2007.36510.1038/nnano.2007.365 ↗
26. 10.1063/1.178888510.1063/1.1788885 ↗
27. 10.1103/PhysRevB.66.19533610.1103/PhysRevB.66.195336 ↗
28. 10.1063/1.182823610.1063/1.1828236 ↗
29. Goel M. · 2002
30. 10.1002/adfm.20060069010.1002/adfm.200600690 ↗
31. 10.1109/TDEI.2006.166774510.1109/TDEI.2006.1667745 ↗
32. 10.1038/nature0615610.1038/nature06156 ↗
33. 10.1109/5.62250510.1109/5.622505 ↗
34. 10.1103/PhysRev.155.65710.1103/PhysRev.155.657 ↗
35. 10.1063/1.37016510.1063/1.370165 ↗
36. 10.1002/(SICI)1099-0690(199905)1999:5<1239::AID-EJOC1239>3.0.CO;2-R10.1002/(SICI)1099-0690(199905)1999:5<1239::AID-EJOC1239>3.0.CO;2-R ↗
37. 10.1002/jcc.2053910.1002/jcc.20539 ↗
38. 10.1016/j.solmat.2005.11.00510.1016/j.solmat.2005.11.005 ↗
39. 10.1063/1.136237110.1063/1.1362371 ↗
40. 10.1016/S0009-2614(01)00431-610.1016/S0009-2614(01)00431-6 ↗
41. 10.1016/j.jorganchem.2006.05.01210.1016/j.jorganchem.2006.05.012 ↗