Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Source abstract
Abstract
Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum. Central to this capability are IR photodetectors (PDs) based on 2D materials (2DMs), which offer tunable spectral responsivity and wavelength‐resolved multiparameter optical information. This review examines the fundamental mechanisms and design strategies that enable spectral tunability at the frontier of 2DM‐based IR PDs, elucidating how they offer unique opportunities to tailor spectral responses across a broad wavelength range through symmetry‐breaking induced by geometric (geometrically tunable spectral engineering) and electric‐field (electrically tunable spectral engineering) effects. These approaches collectively enable simultaneous optimization of spectral tunability and sensitivity without compromising wavelength coverage, speed, power efficiency, or scalability, while also providing polarization sensitivity, multiband detection, and self‐powered operation for edge‐integrated AI platforms, including computational spectroscopy, artificial vision, computing, and communications. This review outlines the key processes and integration requirements for scalable manufacturing, which are essential for establishing spectrally tunable 2DM‐based IR PDs as core building blocks of intelligent optoelectronics. Ultimately, the development of spectrally tunable 2DM‐based IR PDs will transform intelligent optoelectronic platforms for or with AI.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Ga2O3 and related materials · Thermal Radiation and Cooling Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Semiconductor Engineering Department of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China
VTT Technical Research Centre of Finland Tietotie 3 Espoo 02150 Finland
Digital Biomedical Research Division Electronics and Telecommunications Research Institute Daejeon 34129 Republic of Korea
QTF Centre of Excellence Department of Electronics and Nanoengineering Aalto University Espoo 02150 Finland
School of Electrical and Electronic Engineering School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore
School of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea
GIST InnoCORE AI‐Nano Convergence Institute for Early Detection of Neurodegenerative Diseases Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea
School of Mechanical Engineering Shanghai Jiao Tong University Shanghai 200240 China
Cambridge Graphene Centre University of Cambridge Cambridge CB3 0FA UK
Advanced Research Institute of Multidisciplinary Sciences Beijing Institute of Technology Beijing 100081 China
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Electronics and Telecommunications Research Institute · Gwangju Institute of Science and Technology
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