Tunable Pyro‐Phototronic Effect by Polar Interface Engineering in Ga ₂ O ₃

Abstract Polar interfaces with broken inversion symmetry have garnered significant attention due to their profound influence on charge/spin distribution and propagation, leading to unconventional phenomena such as high‐mobility electron gas, polar skyrmions, and interfacial pyroelectric/pyro‐phototronic effects. Designing and controlling polar interfaces is crucial for developing advanced functional electronic devices. Here, a strategy of polar interface engineering is proposed by modulating the built‐in electric field in Schottky junctions to generate and tune the pyro‐phototronic effect in a centrosymmetric semiconductor (β‐Ga ₂ O ₃ ). By varying the work functions of metal electrodes and doping concentrations, the built‐in electric field is effectively controlled, enabling modulation of the effective polarization and pyroelectric coefficient. Leveraging the pyro‐phototronic effect, the Ga ₂ O ₃ Schottky junction‐based self‐powered photodetector achieves an ultrafast response of 0.2 µs to solar‐blind UV light, representing a 50‐fold improvement over the control device operating with the photoconductive effect. Furthermore, five optoelectronic logic gates are realized, enabled by the bidirectional pyro‐phototronic current during light switching. These findings provide a pathway for exploring novel pyro‐phototronic phenomena in polar‐interface‐engineered semiconductors and advancing ultrafast optoelectronic detection technologies.