Fully Electrically Controlled Low Resistance‐Area Product and Enhanced Tunneling Magnetoresistance in the Van Der Waals Multiferroic Tunnel Junction

Abstract The development of next‐generation spin nanomemory systems faces the challenge of achieving nonvolatile electrical control of magnetic states in magnetic tunnel junctions. Here, a strategy is proposed using trilayer van der Waals heterostructures combining an A‐type antiferromagnetic YBr₂ bilayer and a ferroelectric Al₂Se₃ monolayer. Nonvolatile modulation of the ferroelectric polarization direction of Al₂Se₃ can flip the interlayer magnetic coupling of YBr₂ between ferromagnetic and antiferromagnetic states. The interlayer magnetic phase transition is caused by the band structure shift and interfacial charge transfer induced by the polarization field. The TiTe₂/2L‐YBr₂/Al₂Se₃/TiTe₂ multiferroic devices achieve a fully electrically controlled tunneling magnetoresistance with a ratio of up to 11550% and an exceptionally low resistance‐area product of 0.28 Ω µm² by establishing a good P‐type Ohmic contact between the TiTe₂ electrode and the central heterojunction. There is also a perfect spin filtering effect. This work provides new perspectives for the development of low‐power, fast‐response, nonvolatile and fully electrically controlled spintronic memory devices.