journal article·2025-08Open access

Tunable Tactile Synapses Enabled by Erasable Doping in Iongel‐Gated Nanotube Network Transistors

Yan Huang, Yaoqiang Zhou, Sonja Wieland, Yachen Li, Ni Zhao, Jana Zaumseil

Advanced Functional Materials· Volume 35· Issue 31

Abstract

Abstract The tunable synaptic plasticity of biological sensory systems plays a pivotal role in efficient information processing and adaptation. Bio‐mimetic sensory synaptic devices, particularly those for tactile synapses, usually lack effective sensory gating control and thus exhibit limited adaptability to external stimuli. Here, an artificial tactile synaptic sensor is introduced that mimics the features of biological systems. The monolithic device utilizes an iongel‐gated single‐walled carbon nanotube (SWCNT) network transistor with slow but reversible electrochemical doping characteristics. Utilizing an iongel with a mechanosensitive 3D structure, the device demonstrates pressure sensing ability and nonvolatile changes to the p‐doping of the SWCNT network that depend on pressure amplitude and duration and enable long‐term memory of pressure signals for up to ≈22 h. The device can work in excitatory or inhibitory mode. In both cases, the synaptic plasticity can be adjusted independently from the tactile stimulus by varying the gate voltage, which emulates the intrinsic plasticity of biological systems. Furthermore, the time‐dependent and spatially nonuniform doping of the SWCNT channel during and after pressure loading is corroborated through in situ photoluminescence imaging. This visualization of the doping process in SWCNT networks provides direct insights into the operation mechanism underlying the nonvolatile pressure response in these artificial tactile synaptic sensors.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Advanced Sensor and Energy Harvesting Materials · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Physical Chemistry Universität Heidelberg 69120 Heidelberg Germany

Department of Electronic Engineering The Chinese University of Hong Kong Hong Kong, SAR 999077 China

Funding

Deutsche Forschungsgemeinschaft · Alexander von Humboldt-Stiftung · H2020 European Research Council

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