Laser Patterning for 2D Lateral and Vertical VS₂/MoS₂ Metal/Semiconducting Heterostructures

Abstract 2D metal/semiconducting heterostructures have attracted extensive attention for potential applications in future electronic and optoelectronic devices. However, the simple and fast preparation of patterned metal/semiconducting heterostructures with controllable channel lengths still faces challenges. Here, a simple and reliable laser patterning method for preparing patterned lateral/vertical 1T/2H VS₂/MoS₂ metal/semiconducting heterostructures is reported. Specifically, site‐selective etching of VS₂ can be realized through the combination of laser radiation and acid solution etching. Further, pre‐patterned VS₂ nanoplates with edge dangling bonds can offer effective nucleation points for the lateral epitaxial growth of MoS₂, thus generating patterned VS₂‐MoS₂ lateral heterostructures. The laser processing method can further be used to create patterned VS₂/MoS₂ vertical van der Waals (vdWHs), which can only selectively etch the upper layer VS₂ while maintaining the intrinsic structure of the bottom layer MoS₂. The obtained patterned VS₂/MoS₂ vdWHs show a similar channel length of ≈420 nm, and the VS₂ vdW contact MoS₂ transistor is fabricated, delivering an On‐state current of 4.01 µA/µm, and carrier mobility of 3.56 cm² s⁻¹ V⁻¹. This approach is also general for preparing patterned VSe₂, VSe₂/WSe₂ heterostructures.