journal article·2024-08

Perovskite‐Oxide‐Based Ferroelectric Synapses Integrated on Silicon

Ningchong Zheng, Yipeng Zang, Jiayi Li, Cong Shen, Peijie Jiao, Lunqiang Zhang, He Wang, Lu Han, Yuwei Liu, Wenjuan Ding, Xinrui Yang, Leyan Nian, Jianan Ma, Xingyu Jiang, Yuewei Yin, Yidong Xia, Yu Deng, Di Wu, Xiaoguang Li, Xiaoqing Pan, Yuefeng Nie

Advanced Functional Materials· Volume 34· Issue 32
Publisher page

Abstract

Abstract Perovskite‐oxide‐based ferroelectric tunnel junctions (FTJs) hold great potential for applications in non‐volatile memory and neuromorphic computing due to their unique properties. However, the challenges in synthesizing high crystalline quality perovskite oxides directly on silicon wafer limit the applications of these FTJs in conventional Si‐based integrated circuits, let alone the neural networks. Herein, perovskite oxide FTJs with an ON/OFF ratio up to 1.2×106, writing/erasing speed down to 1 nanosecond, and cycling endurance (>106) are achieved by integrating ultrathin freestanding ferroelectric perovskite oxide membranes directly on silicon wafers using a wet‐transfer method. Moreover, synapses based on these FTJs exhibit long‐term plasticity. For handwritten digits recognition task, the convolutional neural network (CNN) simulation is implemented achieving a recognition accuracy up to 98.9% based on the experimental performance, close to the result of 99.2% by software‐floating‐point‐based CNN. This work sheds light on the integration of ferroelectric perovskite oxides directly on silicon for high‐performance FTJ‐based non‐volatile memory and synaptic devices.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Science and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

Anhui Key Laboratory of Magnetic Functional Materials and Devices School of Materials Science and Engineering Anhui University Hefei 230601 China

Department of Mechanical Engineering The University of Hong Kong Pokfulam Road Hong Kong 999077 China

Hefei National Research Center for Physical Sciences at the Microscale Department of Physics and CAS Key Laboratory of Strongly‐Coupled Quantum Matter Physics University of Science and Technology of China Hefei 230026 China

Suzhou Laboratory Suzhou 215125 China

Department of Chemical Engineering and Materials Science and Department of Physics and Astronomy University of California, Irvine 916 Engineering Tower Irvine CA 92697 USA

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

References (58)

Show source-provided references
1. 10.1126/science.112623010.1126/science.1126230 ↗
2. 10.1103/PhysRevLett.94.24680210.1103/PhysRevLett.94.246802 ↗
3. 10.1038/nature0812810.1038/nature08128 ↗
4. 10.1038/ncomms528910.1038/ncomms5289 ↗
5. 10.1038/nnano.2011.21310.1038/nnano.2011.213 ↗
6. 10.1038/s41467-020-15249-110.1038/s41467-020-15249-1 ↗
7. 10.1038/s41467-022-28303-x10.1038/s41467-022-28303-x ↗
8. 10.1038/nmat341510.1038/nmat3415 ↗
9. 10.1038/ncomms1473610.1038/ncomms14736 ↗
10. 10.1038/s41928-018-0092-210.1038/s41928-018-0092-2 ↗
11. 10.1002/adma.20190576410.1002/adma.201905764 ↗
12. 10.1002/adma.20190412310.1002/adma.201904123 ↗
13. 10.1038/nmat364910.1038/nmat3649 ↗
14. 10.1002/adfm.20220236610.1002/adfm.202202366 ↗
15. 10.1038/s41928-020-0435-710.1038/s41928-020-0435-7 ↗
16. 10.1103/PhysRevLett.81.301410.1103/PhysRevLett.81.3014 ↗
17. 10.1126/science.116967810.1126/science.1169678 ↗
18. 10.1038/ncomms1054710.1038/ncomms10547 ↗
19. 10.1063/1.142841310.1063/1.1428413 ↗
20. 10.1038/s41563-018-0208-010.1038/s41563-018-0208-0 ↗
21. 10.1002/adma.20140252710.1002/adma.201402527 ↗
22. 10.1038/srep1257610.1038/srep12576 ↗
23. 10.1038/s41586-020-2208-x10.1038/s41586-020-2208-x ↗
24. 10.1002/aelm.20210049910.1002/aelm.202100499 ↗
25. 10.1038/s41598-019-56816-x10.1038/s41598-019-56816-x ↗
26. 10.1109/LED.2022.319943410.1109/LED.2022.3199434 ↗
27. 10.1002/adma.20221062810.1002/adma.202210628 ↗
28. 10.1038/s41928-020-0405-010.1038/s41928-020-0405-0 ↗
29. 10.1002/inf2.1238010.1002/inf2.12380 ↗
30. Hwang J. · Small · 2023
31. 10.1038/nmat474910.1038/nmat4749 ↗
32. 10.1038/s41586-019-1255-710.1038/s41586-019-1255-7 ↗
33. 10.1021/acs.nanolett.9b0132710.1021/acs.nanolett.9b01327 ↗
34. 10.1063/1.513308110.1063/1.5133081 ↗
35. 10.1109/LED.2020.304151510.1109/LED.2020.3041515 ↗
36. 10.1088/0022-3727/44/46/46400310.1088/0022-3727/44/46/464003 ↗
37. 10.1103/PhysRevApplied.7.01402010.1103/PhysRevApplied.7.014020 ↗
38. 10.1021/acsnano.5b0222710.1021/acsnano.5b02227 ↗
39. 10.1038/ncomms1521710.1038/ncomms15217 ↗
40. 10.1038/s41427-019-0120-310.1038/s41427-019-0120-3 ↗
41. 10.1063/1.511997010.1063/1.5119970 ↗
42. 10.1002/adma.20110367910.1002/adma.201103679 ↗
43. 10.1021/nn401378t10.1021/nn401378t ↗
44. 10.1103/PhysRev.80.110510.1103/PhysRev.80.1105 ↗
45. 10.1021/acs.nanolett.7b0078810.1021/acs.nanolett.7b00788 ↗
46. 10.1038/s41565-023-01343-010.1038/s41565-023-01343-0 ↗
47. 10.1002/aelm.20200107410.1002/aelm.202001074 ↗
48. 10.1038/s41467-021-22243-810.1038/s41467-021-22243-8 ↗
49. 10.1038/s41467-020-18098-010.1038/s41467-020-18098-0 ↗
50. 10.1038/nature1444110.1038/nature14441 ↗
51. 10.1126/sciadv.abh271610.1126/sciadv.abh2716 ↗
52. 10.1038/s41586-021-04338-w10.1038/s41586-021-04338-w ↗
53. 10.1038/s41467-022-31763-w10.1038/s41467-022-31763-w ↗
54. 10.1103/PhysRevLett.99.26760210.1103/PhysRevLett.99.267602 ↗
55. 10.1103/PhysRevB.71.01411310.1103/PhysRevB.71.014113 ↗
56. 10.1126/science.120698010.1126/science.1206980 ↗
57. 10.1038/nature1646310.1038/nature16463 ↗
58. 10.1126/science.125986910.1126/science.1259869 ↗