Argon Plasma Bombardment Induces Surface‐Rich Sn Vacancy Defects to Enhance the Thermoelectric Performance of Polycrystalline SnSe
Abstract
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films
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Affiliations
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry College of Chemistry Jilin University Changchun 130012 P. R. China
School of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia
Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong 518060 P. R. China
College of Materials Science and Engineering Fuzhou University Fuzhou 350002 P. R. China
Institute of Green Chemistry and Molecular Engineering (IGCME) Sun Yat‐sen University Guangzhou Guangdong 510275 P. R. China
School of Advanced Energy and IGCME Shenzhen Campus Sun Yat‐Sen University (SYSU) Shenzhen 518100 P. R. China
Funding
Ministry of Science and Technology of the People's Republic of China