Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors
Source abstract
Abstract
Abstract There is considerable interest in photodetectors based on nontoxic lead‐free perovskites. Tin‐based perovskites have been regarded as one type of the most promising candidate materials for these devices due to their relatively low bandgap and high light absorption coefficient. In this work, a stacked 2D/3D heterostructure in perovskite films is achieved through a convenient vacuum drying process, which results in an ultrahigh responsivity of up to 6.8 × 10 5 A W −1 and a high detectivity up to 4.0 × 10 14 Jones at a low gate voltage of −5 V across a broad wavelength region from ultraviolet to near‐infrared. Remarkably, the device exhibits synaptic behavior, as demonstrated by its photocurrent response to both photonic and electric stimuli, which closely resembles the memory behavior observed in biological neural networks, promising applications in opto‐synaptic devices.
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Research context
OpenAlex topics: Perovskite Materials and Applications · Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics The Research Center for Organic electronics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong 000 P. R. China
Division of Integrative Systems and Design Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong 000 P. R. China
Key Laboratory of Materials Physics Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of Sciences Hefei 230031 P. R. China
State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
Research Institute of Intelligent Wearable Systems The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong 000 P. R. China
Funding
National Key Research and Development Program of China
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