DataVXAdvanced Functional MaterialsPaper
journal article·2024-09Open access

Tunable High‐Temperature Tunneling Magnetoresistance in All‐van der Waals Antiferromagnet/Semiconductor/Ferromagnet Junctions

Wen Jin, Xinlu Li, Gaojie Zhang, Hao Wu, Xiaokun Wen, Li Yang, Jie Yu, Bichen Xiao, Fei Guo, Wenfeng Zhang, Jia Zhang, Haixin Chang

Advanced Functional Materials· Volume 34· Issue 37
Publisher pageOpen full text
Source abstract

Abstract

Abstract Magnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) property of 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, primarily in ferromagnets. Here, A‐type antiferromagnetism in 2D vdW single‐crystal (Fe0.8Co0.2)3GaTe2 is reported with TN ≈ 203 K in bulk and ≈ 185 K in 9‐nm nanosheets. The metallic nature and out‐of‐plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature is obtained, with the TMR signal persisting at near‐room temperature 280 K. Furthermore, the TMR is tunable by the electric field, and the MTJ device operates stably with a low applied bias down to 1 mV (≈0.6 nA), highlighting its potential for energy‐efficient spintronic devices. This work opens up new opportunities for 2D antiferromagnetic spintronics and quantum devices.
Source: crossref · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Quantum and electron transport phenomena · 2D Materials and Applications · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Joining and Electronic Packaging State Key Laboratory of Material Processing and Die & Mold Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 China

Shenzhen R&D Center of Huazhong University of Science and Technology Shenzhen 518000 China

School of Physics and Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China

Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering Huazhong University of Science and Technology Wuhan 430074 China

Liuzhou Key Laboratory of New Energy Vehicle Power Lithium Battery School of Electronic Engineering Guangxi University of Science and Technology Liuzhou 545006 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Hubei Province · China Postdoctoral Science Foundation · Science, Technology and Innovation Commission of Shenzhen Municipality

References (50)

Show source-provided references
1. 10.1126/science.106538910.1126/science.1065389 ↗
2. 10.1038/s41586-022-04768-010.1038/s41586-022-04768-0 ↗
3. 10.1109/20.90858110.1109/20.908581 ↗
4. 10.1038/nmat125710.1038/nmat1257 ↗
5. 10.1038/nmat125610.1038/nmat1256 ↗
6. 10.1038/nnano.2016.1810.1038/nnano.2016.18 ↗
7. 10.1038/s41567-018-0062-710.1038/s41567-018-0062-7 ↗
8. 10.1103/RevModPhys.90.01500510.1103/RevModPhys.90.015005 ↗
9. 10.1126/sciadv.aar356610.1126/sciadv.aar3566 ↗
10. 10.1002/aelm.20190017610.1002/aelm.201900176 ↗
11. 10.1103/PhysRevB.95.14442110.1103/PhysRevB.95.144421 ↗
12. 10.1103/PhysRevMaterials.3.03100110.1103/PhysRevMaterials.3.031001 ↗
13. 10.1126/science.aav193710.1126/science.aav1937 ↗
14. 10.1038/s41586-019-1840-910.1038/s41586-019-1840-9 ↗
15. 10.1103/PhysRevMaterials.4.07400810.1103/PhysRevMaterials.4.074008 ↗
16. 10.1038/s41467-021-23122-y10.1038/s41467-021-23122-y ↗
17. 10.1126/sciadv.abm710310.1126/sciadv.abm7103 ↗
18. 10.1038/s41467-022-32605-510.1038/s41467-022-32605-5 ↗
19. 10.1088/0256-307X/40/11/11750110.1088/0256-307X/40/11/117501 ↗
20. 10.1126/sciadv.abd845210.1126/sciadv.abd8452 ↗
21. 10.1038/s41586-018-0631-z10.1038/s41586-018-0631-z ↗
22. 10.1002/ejic.20050102010.1002/ejic.200501020 ↗
23. 10.1021/acs.nanolett.6b0305210.1021/acs.nanolett.6b03052 ↗
24. 10.1088/2053-1583/3/2/02503510.1088/2053-1583/3/2/025035 ↗
25. 10.1063/5.000633710.1063/5.0006337 ↗
26. 10.1126/sciadv.aao679110.1126/sciadv.aao6791 ↗
27. 10.1038/s41699-021-00265-610.1038/s41699-021-00265-6 ↗
28. 10.1038/srep0160810.1038/srep01608 ↗
29. 10.1021/nn405719x10.1021/nn405719x ↗
30. 10.1039/D2NR06886A10.1039/D2NR06886A ↗
31. 10.1039/D2CE01695H10.1039/D2CE01695H ↗
32. 10.1021/acsami.3c0616710.1021/acsami.3c06167 ↗
33. 10.1088/0256-307X/39/12/12850110.1088/0256-307X/39/12/128501 ↗
34. 10.1063/1.140412510.1063/1.1404125 ↗
35. 10.1063/1.134277810.1063/1.1342778 ↗
36. 10.1016/0375-9601(75)90174-710.1016/0375-9601(75)90174-7 ↗
37. 10.1103/PhysRevB.63.24540710.1103/PhysRevB.63.245407 ↗
38. 10.1103/PhysRevLett.96.16680410.1103/PhysRevLett.96.166804 ↗
39. 10.1038/s41563-022-01320-310.1038/s41563-022-01320-3 ↗
40. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
41. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
42. 10.1103/PhysRevB.23.504810.1103/PhysRevB.23.5048 ↗
43. 10.1103/PhysRevLett.45.56610.1103/PhysRevLett.45.566 ↗
44. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
45. 10.1063/5.013618010.1063/5.0136180 ↗
46. 10.1103/PhysRevB.43.757010.1103/PhysRevB.43.7570 ↗
47. 10.1088/0953-8984/14/11/30210.1088/0953-8984/14/11/302 ↗
48. 10.1103/PhysRevB.61.787710.1103/PhysRevB.61.7877 ↗
49. 10.1080/1478643700823847210.1080/14786437008238472 ↗
50. 10.1103/PhysRevB.31.620710.1103/PhysRevB.31.6207 ↗