2D Bi₂O₂Te Semiconductor with Single‐Crystal Native Oxide Layer

Abstract Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface‐sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large‐area synthesis and controllable thermal oxidation behavior toward single‐crystal native oxides. This shows that surface‐adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer‐by‐layer manner with a low‐stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible‐light transparency and is compatible with wet‐chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar‐integrated functional nanoelectronics such as tunnel junction devices, field‐effect transistors, and memristors.