The Robust Ferroelectric and Electrical Response in 2D Bi₂O₂Se Semiconductor

Abstract The amelioration of atomically thin ferroelectric materials is imperative for next‐generation outperformed two‐dimensional (2D) electronics, which is elusive by their bulk counterparts. These remarkable materials’ ferroelectric and piezoelectric features are the fundamental urges in optoelectronics, electronics, and energy harvesting. In this work, 2D ferroelectric Bi₂O₂Se flakes have been synthesized using a modified chemical vapor deposition technique. The 6 nm thick Bi₂O₂Se flake provides a robust ferroelectric switching under an applied voltage of ±10 V by piezoresponse force microscopy, further confirmed by first principles. Leveraging the successful growth, the high‐quality Bi₂O₂Se flakes permit the fabrication of a field‐effect transistor (FET) with state‐of‐the‐art performance. The FET device rewards a high current on–off ratio of 10⁸ and field effect mobility of almost 131 cm² V⁻¹ s⁻¹, owing to the small carrier effective mass of 0.2 m₀. Combined, the electric field‐induced local polarization of ferroelectric switching and unprecedented device performance of Bi₂O₂Se semiconductors are certified for their utilization in advanced nanoelectronics and miniaturization of multifunctional devices with multifunctionalities.