journal article·2024-04

Graphene‐Assisting Nonvolatile Vanadium Dioxide Phase Transition for Neuromorphic Machine Vision

Xuan Yu, Chuantong Cheng, Jiran Liang, Ming Wang, Beiju Huang, Zidong Wang, Liujie Li

Advanced Functional Materials· Volume 34· Issue 16
Publisher page

Abstract

Abstract As a photoinduced and electro‐induced phase change material, VO2 undergoes a transition from an insulating phase to a metallic phase under photoelectric stimulation, accompanied by strong lattice distortion and band changes. This characteristic of simultaneously responding to optical and electrical signals provides a basis for simulating biological vision systems, but the volatility of phase transition challenges the Long‐term memory of neural networks. Here, a phase transition‐regulated artificial photoelectric synapse based on VO2/graphene heterostructure is proposed. Graphene serves as an electron exchange center, amplifying weak signals generated by VO2 phase transitions and achieving nonvolatile properties. Using the energy band change of VO2 before and after the photoinduced phase transition and the electron exchange with graphene, synaptic devices can be regulated by optical signals. The modulation of gate voltage on the Fermi level of graphene leads to the phase transition of VO2, thereby achieving the regulation of synapses by electrical signals. Extract the electrical conductivity difference between two equivalent synapses as synaptic weight values to train a three‐layer neural network. The trained neural network achieves high recognition accuracy and noise resistance for handwritten digits, which is of great significance for the application of artificial optoelectronic synapses in neural morphology calculation.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Optoelectronic Materials and Devices Chinese Academy of Sciences Beijing 100083 P. R. China

School of Microelectronics Tianjin University Tianjin 300072 P. R. China

Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology Tianjin University Tianjin 300072 P. R. China

College of Materials Science and Opto‐Electronic Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China

Frontier Institute of Chip and System Zhangjiang Fudan International Innovation Center Fudan University Shanghai 200433 P. R. China

Shanghai Qi Zhi Institute 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui Shanghai 200232 P. R. China

Funding

National Key Research and Development Program of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences · National Natural Science Foundation of China

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