Electrically Dynamic Configurable WSe₂ Transistor and the Applications in Photodetector

Abstract Non‐destructive and reversible modulations of polarity and carrier concentration in transistors are essential for complementary devices. The fabricated multi‐gated WSe₂ devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification ratio of 4.1 × 10⁵, as well as n‐ and p‐type inverter with voltage gain of 19.9 and 12.1, respectively. Benefiting from the continuous band alignment induced modulation of channel underneath the dual gates, the devices exhibit high‐performance photodetection in wide spectral range. The devices yield high photo‐responsivity (5.16 A W⁻¹) and large I_light/I_dark ratio (1 × 10⁵). Besides, the local gate fields accelerate the separation of photo‐induced carriers, leading to fast response without persistent current. This strategy takes the advantage of the simplified design and continues to deliver integrated circuits with high density. The superior electrical and photodetection characteristics exhibit great potency in the domain of future optoelectronics.