Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications

Abstract Self‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems, sensing in IoT electronics, facial recognition, health monitoring, optical communication networks, night vision, and biomedical imaging. However, silicon commercial detectors need external power to operate and cooling to suppress large dark currents. This work demonstrates a new class of CMOS‐compatible self‐powered NIR photodetector based on ferroelectric 5‐nm thick ZrO₂ films which do not require cooling and therefore have two key advantages over Si, and at the same time have comparable performance metrics. At room‐temperature, under 940 nm wavelength illumination (1.4 mW cm⁻² power density, 10 Hz repetition rate), and without any power applied, fast rise and fall times of ≈2 and 4 µs, respectively, are achieved in Al/Si/SiO_x/ZrO₂/ITO devices, along with responsivity, detectivity and sensitivity values of up to ≈3.4 A W⁻¹, 1.2 × 10¹⁰ Jones and 4.2 × 10³, respectively, far exceeding all other emerging self‐powered systems. Furthermore, dual‐band NIR detection is shown for different NIR wavelengths, proof‐of‐concept feasibility being demonstrated for the smart identification of NIR targets. Therefore, it is demonstrated, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect, and the ferroelectric effect is a novel method to significantly enhance the performance of CMOS‐compatible ZrO₂‐based self‐powered photodetectors in the NIR region.