Solution‐Processed and Room‐Temperature Spin Light‐Emitting Diode Based on Quantum Dots/Chiral Metal‐Organic Framework Heterostructure

Abstract Spin optoelectronics is an indispensable key for the future development of spintronics. In conventional spin light emitting diodes (LEDs), spin‐polarized carrier pairs are injected electrically into the light emitting layer and create circularly polarized light (CPL). Generally, spin‐polarized carriers are accomplished using ferromagnetic contacts or applying an external magnetic field, which will produce several drawbacks, including low temperature operation, low spin‐polarized carriers injection efficiency, etc. To circumvent the existing shortcomings, here, an alternative approach is proposed and achieves spin‐polarized LEDs at room temperature based on quantum dots (QDs)/chiral metal‐organic framework heterojunction without using ferromagnetic contacts or magnetic fields. The spin‐polarized injected layer composed of self‐assembled monolayer (SAM)/Chiral‐MOF ([Sr(9,10‐adc)(DMAc)2]n)) film, which produces spin‐polarized holes with spin orientation, determining the polarization and strength of circularly polarized electroluminescence (CP‐EL). The spin‐QLED emits CP‐EL at a rate of 12.24% efficiency, which provides an excellent alternative to generate new functionality for conventional QLEDs. The approach is anticipated to be very useful, enabling to offer a general methodology for generating not yet realized spin optoelectronic devices.