journal article·2024-04

Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors

Xinling Liu, Chi Zhang, Enlong Li, Caifang Gao, Ruixue Wang, Yu Liu, Fucai Liu, Wu Shi, Yahua Yuan, Jian Sun, Yen‐Fu Lin, Junhao Chu, Wenwu Li

Advanced Functional Materials· Volume 34· Issue 15
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Abstract

Abstract Memristors based on 2D semiconductors hold great promise due to their atomic‐level thickness and tunable optoelectronic properties. However, a significant challenge lies in suppressing the large off‐state current, which leads to additional standby power consumption. Here, a simple and versatile method is presented to address this issue by introducing a thin h‐BN interlayer between 2D semiconductors and the electrodes. The thickness of the h‐BN interlayer serves as a pivotal parameter for modulating the interfacial Schottky barrier, thereby influencing the off‐state current level. This fabricated graphene/α‐In2Se3/h‐BN/Cr‐Au memristor, forming a van der Waals heterostructure, exhibits unipolar resistive switching behavior. Remarkably, the memristor incorporating an 8 nm h‐BN interlayer showcases an ultralow off‐state current of 4.2 × 10−13 A, five orders of magnitude lower than that without the h‐BN interlayer. It also achieves a current switching on/off ratio of up to 109 and realizes 32 distinct resistance states, enabling robust multi‐bit memory capabilities. Excellent stability and durability are maintained due to the self‐encapsulation of the h‐BN interlayer. Furthermore, this method is also applicable to memristors built on HfS2, WS2, and WSe2, highlighting its broad potential for technological applications.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Photovoltaic Science and Technology Department of Materials Science Fudan University Shanghai 200433 China

Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai 200433 China

Key Laboratory of Polar Materials and Devices (Ministry of Education) East China Normal University Shanghai 200241 China

School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 China

Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou 313098 China

State Key Laboratory of Surface Physics Institute for Nanoelectronic Devices and Quantum Computing Fudan University Shanghai 200433 China

School of Physics Central South University Changsha 410083 China

Department of Physics Institute of Nanoscience Department of Material Science and Engineering i‐Center for Advanced Science and Technology (i‐CAST) National Chung Hsing University Taichung 40227 Taiwan

Funding

National Natural Science Foundation of China · Department of Science and Technology of Hunan Province · National Key Research and Development Program of China

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