Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Source abstract
Abstract
Abstract Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron mobility µe than silicon but suffers from a much lower hole mobility µh (µe/µh = 80), thus unsuited to CMOS application with a single material. Through the accurate ab initio quantum‐transport simulations, the performance gap between the NMOS and PMOS is significantly narrowed is predicted and even vanished in the sub‐2‐nm‐diameter gate‐all‐around (GAA) InAs nanowires (NW) FETs because the inversion of the light and heavy hole bands occurs when the diameter is shorter than 3 nm. It is further proposed several feasible strategies for further improving the performance symmetry in the GAA InAs NWFETs. Short‐channel effects are effectively depressed in the symmetric n‐ and p‐type GAA InAs NWFETs till the gate length is scaled down to 2 nm according to the standards of the International Technology Roadmap for Semiconductors. Therefore, the ultrasmall GAA InAs NWFETs possess tremendous prospects in CMOS integrated circuits.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
Department of Chemistry The University of Hong Kong Hong Kong 999077 P. R. China
Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 P. R. China
Key Laboratory of Material Physics, School of Physics and Microelectronics, Ministry of Education, Zhengzhou University Zhengzhou 450001 China
State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing 100876 P. R. China
School of Integrated Circuits Peking University Beijing 100871 P. R. China
Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China
Peking University Yangtze Delta Institute of Optoelectronics Nantong 226000 P. R. China
Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 P. R. China
Funding
National Natural Science Foundation of China · Fundamental Research Funds for the Central Universities
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