journal article·2021-10Open access

Revealing the Mechanism behind the Catastrophic Failure of n‐i‐p Type Perovskite Solar Cells under Operating Conditions and How to Suppress It

Changzeng Ding, Li Yin, Lianping Zhang, Rong Huang, Shizhao Fan, Qun Luo, Jian Lin, Fangsen Li, Chun Zhao, Ronald Österbacka, Chang‐Qi Ma

Advanced Functional Materials· Volume 31· Issue 40

Abstract

Abstract The n‐i‐p type perovskite solar cells suffer unpredictable catastrophic failure under operation, which is a barrier for their commercialization. The fluorescence enhancement at Ag electrode edge and performance recovery after cutting the Ag electrode edge off prove that the shunting position is mainly located at the edge of device. Surface morphology and elemental analyses prove the corrosion of the Ag electrode and the diffusion of Ag+ ions on the edge for aged cells. Moreover, much condensed and larger Ag clusters are formed on the MoO3 layer. Such a contrast is also observed while comparing the central and the edge of the Ag/Spiro‐OMeTAD film. Hence, the catastrophic failure mechanism can be concluded as photon‐induced decomposition of the perovskite film and release reactive iodide species, which diffuse and react with the loose Ag clusters on the edge of the cell. The corrosion of the Ag electrode and the migration of Ag+ ions into Spiro‐OMeTAD and perovskite films lead to the forming of conducting filament that shunts the cell. The more condensed Ag cluster on the MoO3 surface as well as the blocking of holes within the Spiro‐OMeTAD/MoO3 interface successfully prevent the oxidation of Ag electrode and suppress the catastrophic failure.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Advanced battery technologies research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Nano‐Tech and Nano‐Bionics University of Science and Technology of China 398 Jinzhai Road Hefei 230026 P. R. China

Printable Electronic Research Center Suzhou Institute of Nano‐Tec and Nano‐Bionics Chinese Academy of Sciences (CAS) 398 Ruoshui Road, SEID, SIP Suzhou 215123 P. R. China

School of Science School of Advanced Technology Xi'an Jiaotong‐Liverpool University Suzhou 215123 China

Vacuum Interconnected Nanotech Workstation Suzhou Institute of Nano‐Tec and Nano‐Bionics Chinese Academy of Sciences (CAS) 398 Ruoshui Road, SEID, SIP Suzhou 215123 P. R. China

Nano‐Devices and Materials Division Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences (CAS) 398 Ruoshui Road, SEID, SIP Suzhou 215123 P. R. China

Physics and Center for Functional Materials Faculty of Science and Technology Åbo Akademi University Porthaninkatu 3 Turku 20500 Finland

Funding

Chinese Academy of Sciences

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