High performance and the low voltage operating InGaZnO thin film transistor

Abstract In this study, we compare the electrical properties of inverted-coplanar-type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO2/IGZO TFTs have higher field-effect mobility than the SiO2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V−1 s−1, a low sub-threshold swing of 90 mV dec−1, and a threshold voltage of 0.67 V, respectively.