journal article·2023-05

Periodical Ripening for MOCVD Growth of Large 2D Transition Metal Dichalcogenide Domains

Mengjie Liu, Jing Liao, Yu Liu, Luyang Li, Rongji Wen, Tianyu Hou, Rui Ji, Kaili Wang, Zhigang Xing, Dong Zheng, Junyang Yuan, Fengrui Hu, Yongtao Tian, Xiaoyong Wang, Yi Zhang, Alicja Bachmatiuk, Mark Hermann Rümmeli, Ran Zuo, Yufeng Hao

Advanced Functional Materials· Volume 33· Issue 18
Publisher page

Abstract

Abstract 2D semiconductors, especially 2D transition metal dichalcogenides (TMDCs), have attracted ever‐growing attention toward extending Moore's law beyond silicon. Metal–organic chemical vapor deposition (MOCVD) has been widely considered as a scalable technique to achieve wafer‐scale TMDC films for applications. However, current MOCVD process usually suffers from small domain size with only hundreds of nanometers, in which dense grain boundary defects degrade the crystalline quality of the films. Here, a periodical varying‐temperature ripening (PVTR) process is demonstrated to grow wafer‐scale high crystalline TMDC films by MOCVD. It is found that the high‐temperature ripening significantly reduces the nucleation density and therefore enables single‐crystal domain size over 20 µm. In this process, no additives or etchants are involved, which facilitates low impurity concentration in the grown films. Atom‐resolved electron microscopy imaging, variable temperature photoluminescence (PL) spectroscopy, and electrical transport results further confirm comparable crystalline quality to those observed in mechanically exfoliated TMDC films. The research provides a scalable route to produce high‐quality 2D semiconducting films for applications in electronics and optoelectronics.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Ga2O3 and related materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210023 China

Soochow Institute for Energy and Materials Innovation (SIEMIS) Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province and School of Energy Soochow University Suzhou 215006 China

State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Optoelectronics and Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China

School of Physics Nanjing University Nanjing 210093 China

Key Laboratory of Material Physics of Ministry of Education and School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 China

Chuyun Tek Technology Co., Ltd. No. 500, Sanzao Road Shanghai 201210 China

LUKASIEWICZ Research Network PORT Polish Center for Technology Development Stablowicka 147 54 Wroclaw Poland

The Leibniz Institute for Solid State and Materials Research Dresden P.O. Box 270116 D‐01171 Dresden Germany

Centre of Polymer and Carbon Materials Polish Academy of Sciences M. Curie‐Sklodowskiej 34 41‐819 Zabrze Poland

Institute of Environmental Technology VSB‐Technical University of Ostrava 17. Listopadu 15 708 33 Ostrava Czech Republic

School of Energy and Power Jiangsu University Zhenjiang 212013 China

Funding

National Natural Science Foundation of China

References (48)

Show source-provided references
1. 10.1021/acs.chemrev.0c0119110.1021/acs.chemrev.0c01191 ↗
2. 10.1039/D1CS00706H10.1039/D1CS00706H ↗
3. 10.1016/j.flatc.2022.10039910.1016/j.flatc.2022.100399 ↗
4. 10.1021/acsnano.1c0964410.1021/acsnano.1c09644 ↗
5. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
6. 10.1038/s41586-020-2861-010.1038/s41586-020-2861-0 ↗
7. 10.1038/s41586-021-04323-310.1038/s41586-021-04323-3 ↗
8. 10.1021/acs.nanolett.1c0299110.1021/acs.nanolett.1c02991 ↗
9. 10.1021/acs.nanolett.8b0109110.1021/acs.nanolett.8b01091 ↗
10. 10.1038/s41467-022-28628-710.1038/s41467-022-28628-7 ↗
11. 10.1002/adma.20200354210.1002/adma.202003542 ↗
12. 10.1021/accountsmr.1c0009210.1021/accountsmr.1c00092 ↗
13. 10.1088/2053-1583/3/2/02501510.1088/2053-1583/3/2/025015 ↗
14. 10.1088/1361-6528/aa695810.1088/1361-6528/aa6958 ↗
15. 10.1021/acsnano.7b0705910.1021/acsnano.7b07059 ↗
16. 10.1021/nn507328610.1021/nn5073286 ↗
17. 10.1038/s41598-017-02228-810.1038/s41598-017-02228-8 ↗
18. 10.1021/acsnano.8b0923010.1021/acsnano.8b09230 ↗
19. 10.1038/nature1441710.1038/nature14417 ↗
20. 10.1021/acs.nanolett.7b0452110.1021/acs.nanolett.7b04521 ↗
21. 10.1021/acsnano.0c0539410.1021/acsnano.0c05394 ↗
22. 10.1002/smll.20210636810.1002/smll.202106368 ↗
23. 10.1021/acsami.8b1637410.1021/acsami.8b16374 ↗
24. 10.1002/inf2.1227410.1002/inf2.12274 ↗
25. 10.1093/nsr/nwz22310.1093/nsr/nwz223 ↗
26. 10.1038/s41598-017-02919-210.1038/s41598-017-02919-2 ↗
27. 10.1021/acsami.0c1839010.1021/acsami.0c18390 ↗
28. 10.1126/science.276.5311.37710.1126/science.276.5311.377 ↗
29. 10.1515/zpch-1900-343110.1515/zpch-1900-3431 ↗
30. 10.1021/acsnano.5b0304310.1021/acsnano.5b03043 ↗
31. 10.1021/acsnano.0c0675010.1021/acsnano.0c06750 ↗
32. 10.1038/s41586-021-03338-010.1038/s41586-021-03338-0 ↗
33. 10.1002/smll.20210074310.1002/smll.202100743 ↗
34. 10.1021/nn507349510.1021/nn5073495 ↗
35. Zhang C. · ACS Nano · 2019 · 13 · 1595
36. 10.1038/s41467-021-24102-y10.1038/s41467-021-24102-y ↗
37. 10.1038/s41467-019-10228-710.1038/s41467-019-10228-7 ↗
38. 10.1038/nnano.2013.15110.1038/nnano.2013.151 ↗
39. 10.1038/nphys332410.1038/nphys3324 ↗
40. 10.1088/1361-6528/aa87d010.1088/1361-6528/aa87d0 ↗
41. 10.1021/acsnano.7b0841810.1021/acsnano.7b08418 ↗
42. 10.1002/adfm.20160041810.1002/adfm.201600418 ↗
43. 10.1088/2053-1583/aa5b2110.1088/2053-1583/aa5b21 ↗
44. 10.1039/C4NR04602A10.1039/C4NR04602A ↗
45. 10.1116/1.59147210.1116/1.591472 ↗
46. 10.1038/s41467-017-00516-510.1038/s41467-017-00516-5 ↗
47. 10.1103/PhysRevB.98.11530810.1103/PhysRevB.98.115308 ↗
48. 10.1126/science.124387910.1126/science.1243879 ↗