2D Derivative Phase Induced Growth of 3D All Inorganic Perovskite Micro–Nanowire Array Based Photodetectors

Abstract A large number of derivative phases in inorganic perovskites are reported with special structures and extraordinary performances in photoelectronic device applications. The reverse phase transition between derivative phases and perovskites usually induces recrystallization or forms mixed components. In this work, derivative phase‐induced growth of the CsPbBr₃ micro–nanowire (MW) array by utilizing phase transition of the 2D CsPb₂Br₅ phase is reported. Owing to its layered structure and phase transition, annealing of CsPb₂Br₅ at a temperature of 550 °C combined with solvent quenching leads to a templating effect to form a high‐quality CsBr MW array. Subsequent PbBr₂ deposition and the second annealing are employed to form aligned CsPbBr₃ MW arrays. Based on this method, a CsPbBr₃ MW array‐based photodetector is fabricated. The large grain size, less grain boundaries, and lower surface potential of the CsPbBr₃ MW array lead to high device performance with a responsivity of 7.66 A W⁻¹, a detectivity of ≈10¹² Jones, and long‐term operational stability over 1900 min.