Solid‐State Electrochemical Thermal Transistors
Source abstract
Abstract
Abstract Thermal transistors that electrically control heat flow have attracted growing attention as thermal management devices and phonon logic circuits. Although several thermal transistors are demonstrated, the use of liquid electrolytes may limit the application from the viewpoint of reliability or liquid leakage. Herein, a solid‐state thermal transistor that can electrochemically control the heat flow with an on‐to‐off ratio of the thermal conductivity (κ) of ≈4 without using any liquid is demonstrated. The thermal transistor is a multilayer film composed of an upper electrode, strontium cobaltite (SrCoOx), solid electrolyte, and bottom electrode. An electrochemical redox treatment at 280 °C in air repeatedly modulates the crystal structure and κ of the SrCoOx layer. The fully oxidized perovskite‐structured SrCoO3 layer shows a high κ ≈3 .8 W m−1 K−1, whereas the fully reduced defect perovskite‐structured SrCoO2 layer shows a low κ ≈ 0.95 W m−1 K−1. The present solid‐state electrochemical thermal transistor may become next‐generation devices toward future thermal management technology.
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Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Advanced Thermoelectric Materials and Devices · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Graduate School of Information Science and Technology Hokkaido University N14W9, Kita 060‐0814 Sapporo Japan
Research Institute for Electronic Science Hokkaido University N20W10, Kita 001‐0020 Sapporo Japan
Department of Physics Pusan National University Geumjeong‐gu 46241 Busan Korea
Institute of Engineering Innovation The University of Tokyo 2‐11‐16 Yayoi Bunkyo Tokyo 113‐8656 Japan
Funding
Japan Society for the Promotion of Science
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