Improving organic field-effect transistors based on double active layers structure

Abstract Organic field-effect transistors (OFETs) were fabricated based on double active layers structure. Different substrate temperatures and thermal treatment were adopted to prepare double active layers and optimize film morphology. The grain size of organic films can be effectively controlled by the change in substrate temperature in the process of deposition. An improved device performance was obtained compared with conventional single layer devices. This result is attributed to the introduction of double active layers. We believe that this kind of optimization will simultaneously improve charge injection and transportation of OFETs.