Reconfigurable and Broadband Polarimetric Photodetector
Source abstract
Abstract
Abstract The sensitive detection of light polarization besides the intensity and wavelength, can provide a new degree of freedom for more and clearer information of imaging targets in night, fog, and smoke environment. However, the conventional filter‐integrated polarimetric photodetectors suffer from the complicated fabrication process and limited spectral range. Herein, broadband and polarization‐sensitive photodetectors are achieved with reconfigurable operation mode, utilizing the linear dichroism and narrow band gap of 2D As0.4P0.6 with in‐plane anisotropic structure. In As0.4P0.6‐MoTe2 heterojunction device, both photo‐gating and photovoltaic modes are operated and switchable, contributing to high responsivity (1590 A W−1 at 405 nm and 14.7 A W−1 at 1550 nm) and ultrafast speed (25 µs) in the wide spectral band (405–1550 nm). Interestingly, an optical reversal is observed on both linear dichroism and polarimetric photocurrent due to the wavelength‐dependent polarization reverse nature of the As0.4P0.6 flakes. The dichroism ratio of photocurrent can be modulated from unity to ≈10 by varying the gate voltage, enabling the reconfigurable detection mode from polarization‐independence to polarization‐susceptibility. This study demonstrates a new prototype device comprising low symmetric van der Waals heterostructure, possessing the gate‐tunability on both photo‐gain and dichroism ratio, toward high performance, reconfigurable, broadband, and polarization‐resolved photodetection and imaging applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Metamaterials and Metasurfaces Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Semiconductor Science and Technology South China Normal University Foshan 528225 P. R. China
Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
Funding
National Natural Science Foundation of China · China Postdoctoral Science Foundation
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